PART |
Description |
Maker |
TISPPBL3 TISPPBL3D TISPPBL3D-S TISPPBL3DR |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC) TELECOM, SURGE PROTECTION CIRCUIT, PDSO8 DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC) 双远期导电的P -门晶闸管爱立信微电子用户线接口电路电路(SLIC
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Bourns Inc. Bourns, Inc.
|
TISP61089A |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
|
Power Innovations Ltd Power Innovations Limited Power Innovations International, Inc.
|
TISP61089S TISP61089SD TISP61089SDR |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
|
Power Innovations Ltd Power Innovations Limited
|
TISP61089AS |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS 双远期导电的P -可编程门晶闸管过压保
|
Power Innovations International, Inc. Power Innovations Limited Power Innovations Ltd
|
FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
XSDT306TR XSDT306TS XSDT306TP XSDT306TK |
THYRISTOR|REVERSE-CONDUCTING|1.8KV V(DRM)|DO-200VAR142 THYRISTOR|REVERSE-CONDUCTING|1.9KV V(DRM)|DO-200VAR142 THYRISTOR|REVERSE-CONDUCTING|1.7KV V(DRM)|DO-200VAR142 THYRISTOR|REVERSE-CONDUCTING|1.5KV V(DRM)|DO-200VAR142
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|
FS1UM-16A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex Power Semiconductors Mitsubishi Electric Corporation
|
251UL80S20 251UL 251UL100S10 251UL100S15 251UL100S |
2000V Fast Recovery Diode in a DO-205AB (DO-9) package 2000V快恢复二极管中的DO - 205AB(请 9)封 1600V Fast Recovery Diode in a DO-205AB (DO-9) package 1600V快恢复二极管中的DO - 205AB(请 9)封 2500V Fast Recovery Diode in a DO-205AB (DO-9) package 1000V Fast Recovery Diode in a DO-205AB (DO-9) package 1200V Fast Recovery Diode in a DO-205AB (DO-9) package 1800V Fast Recovery Diode in a DO-205AB (DO-9) package 1400V Fast Recovery Diode in a DO-205AB (DO-9) package 250 AMP Fast Recovery Power Silicon Rectifiers Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes 250安培快速恢复电力硅整流 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 250安培快速恢复电力硅整流 Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes 250安培快速恢复电力硅整流
|
OlympicControls, Corp. Cree, Inc. IRF[International Rectifier] http:// International Rectifier, Corp.
|
IHW40N120R3 |
Reverse conducting IGBT
|
Infineon
|
LT1681 LT1681ESW LT1681ISW |
Dual Transistor Synchronous Forward Controller
|
LINER[Linear Technology]
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